Method of making a high conductance ohmic junction for monolithi

Details Method of making a high conductance ohmic junction for monolithi Method of making a high conductance ohmic junction for monolithi

1986-01-21

1988-07-12

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

136249, H01L 3118

Patent

active

047560746

ABSTRACT:
In order to increase the efficiency of solar cells, a monolithic stacked device is constructed comprising a plurality of solar sub-cells adjusted for different bands of radiation. The interconnection between these sub-cells has been a significant technical problem. The invention provides an interconnection which is a thin layer of high ohmic conductance material formed between the sub-cells. Such a layer tends to form beads which serve as a shorting interconnect while passing a large fraction of the radiation to the lower sub-cells and permitting lattice-matching between the sub-cells to be preserved.

REFERENCES:
patent: 4316049 (1982-02-01), Hanak
patent: 4330182 (1982-05-01), Coleman
patent: 4536607 (1985-08-01), Wiesmann
R. D. Dupuis et al., Conference Record, 14th IEEE Photovoltaic Specialists Conf., (1980), pp. 1388-1389.

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