Method of making a high band-gap opto-electronic device

Details Method of making a high band-gap opto-electronic device Method of making a high band-gap opto-electronic device

1991-08-13

1993-04-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437128, 437129, 437133, H01L 2120, H01L 21203

Patent

active

052042847

ABSTRACT:
A high band-gap opto-electronic device is formed by epitaxially growing the device section in a lattice-matched (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P-GaAs system. The band-gap of the epitaxial layer increases with x. Instead of growing the device section directly on the GaAs substrate, a layer of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P, graded in x and in temperature while maintaining substantially y=0.5, is grown as a transitional layer. The high band-gap device structures include homojunctions, heterojunctions and particularly a separate confinement quantum well heterostructures. Various embodiments of the invention include devices on absorbing substrates and on transparent substrates, and devices incorporating strained-layer superlattices.

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