Method of making a HgCdTe thin film transistor

Details Method of making a HgCdTe thin film transistor Method of making a HgCdTe thin film transistor

1993-11-15

1995-04-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437106, 437185, 437911, 437965, 148DIG64, 148DIG139, H01L 21265

Patent

active

054037603

ABSTRACT:
Group II-VI thin film transistors, a method of making same and a monolithic device containing a detector array as well as transistors coupled thereto wherein, according to a first embodiment, there is provided a group II-VI insulating substrate, a doped layer of a group II-VI semiconductor material disposed over the substrate, an insulating gate region disposed over the doped layer, a pair of spaced contacts on the doped layer providing source and drain contacts, a gate contact disposed over the insulating gate region, an insulating layer disposed over exposed regions of the substrate, doped layer, insulating gate region and contacts and metallization disposed on the insulating layer and extending through the insulating layer to the contacts. The thickness of the doped layer is less than the maximum depletion region thickness thereof. In accordance with a second embodiment, there is provided a group II-VI insulating substrate, a first conductive doped group II-VI semiconductor layer disposed over the substrate, a second doped group II-VI layer disposed over the first layer and forming a Schottky barrier therewith, an insulating layer disposed over exposed regions of the substrate, first doped layer and second doped layer and metallization disposed on the insulating layer and extending through the insulating layer to spaced regions on the first layer to form source and drain contacts thereto and to the second layer to form a gate contact thereto. The thickness of said first layer is less than the maximum depth of the depletion region formed by the junction of the first and second layers.

REFERENCES:
patent: 4566918 (1986-01-01), Irvine et al.
patent: 4575920 (1986-03-01), Isunashima
patent: 4597160 (1986-07-01), Ipri
patent: 4622735 (1986-11-01), Shibata
patent: 4630090 (1986-12-01), Simmons et al.
patent: 4654686 (1987-03-01), Borrello
patent: 4876222 (1989-10-01), Luttmer et al.
patent: 4879357 (1989-11-01), Patrick
patent: 4885258 (1989-12-01), Ishihara et al.
patent: 4902637 (1990-02-01), Kondou et al.
patent: 4914500 (1990-04-01), Liu et al.
patent: 4927773 (1990-05-01), Jack et al.
patent: 4929569 (1990-05-01), Yaniv et al.
patent: 4952995 (1990-08-01), Phillips et al.
patent: 4956686 (1990-09-01), Borrello et al.
patent: 4960718 (1990-10-01), Aina
patent: 4960728 (1990-10-01), Schaake et al.
patent: 4984033 (1991-01-01), Ishizu et al.
patent: 5192695 (1993-03-01), Wang et al.
Cd5 Thin Film Field Effect Transistor; Venkateswarlu et al; vol. 22 No. 11, 1976; pp. 739-741; J. Inst. Electronics and Telecom.
Silicon-on-Sapphire Deep Depletion Mos Transistor; Heiman; IEEE Transaction on Electronic devices; Dec. 1966, pp. 856-862.
Electrical Properties of CdTe Metal-Semiconductor FET; Dreifus and Kolbas; 1987; pp. 2722-2724.
Electronic Deep Levels in Laser-crystallized silicon Thin Film MOS capacitors on Fused Silica; Johnson et al; pp. 101-108; 1984; Mat. Res. Soc. Symp. Proc. vol. (33).
Laser-recrystallized SOI devices: Promises and Pitfalls; Kamins; pp. 109-111; vol. (33); Mat. Res. Soc. Symp. Proc.
N-Channel MISFET epitaxial HgCdTe/CdTe; William et al. Electron letters, vol. 16 No. 22; 1980; pp. 839-840.
CdTe MEFETs; D. L. Dreifus and R. M. Kolbas; Appl. Phys. Lett 51(12) 87; pp. 931-933.

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