Method of making a heterojunction bipolar transistor

Details Method of making a heterojunction bipolar transistor Method of making a heterojunction bipolar transistor

1991-09-20

1993-05-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437164, H01L 2972

Patent

active

052121038

ABSTRACT:
A semiconductor device includes an n.sup.+ type InGaAs layer at a surface of the device, a refractory metal emitter electrode making ohmic contact to the n.sup.+ layer without alloying and an externally accessible base region produced in the neighborhood of the emitter electrode by diffusion using the emitter electrode and an insulating side wall film as a diffusion mask.

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