Method of making a heteroepitaxial structure by mesotaxy induced

Details Method of making a heteroepitaxial structure by mesotaxy induced Method of making a heteroepitaxial structure by mesotaxy induced

1986-11-24

1989-03-28

Roy, Upendra

Fishing, trapping, and vermin destroying

357 67, 437 20, 437 25, 437 38, 437200, H01L 21265, H01L 2128

Patent

active

048164216

ABSTRACT:
Disclosed is a technique, termed "mesotaxy", for producing a heteroepitaxial structure comprising a layer of single crystal second material embedded in, and epitaxial with, a single crystal first material matrix. Mesotaxy comprises implantation of at least one chemical species (e.g., Co, Ni, Cr, Y or Mg) into a single crystal body (typically a semiconductor, e.g., Si or Ge) such that a buried layer rich in the implanted species is formed, and heat treating the implanted body such that a buried stoichiometric compound layer (e.g., CoSi.sub.2) is formed. Exemplarily, 3.multidot.10.sup.17 /cm.sup.2 200 keV Co ions are implanted into (100) Si nominally at 350.degree. C., followed by a heat treatment that consists of 1 hour at 600.degree. C. and 30 minutes at 1000.degree. C. The resulting buried CoSi.sub.2 layer is epitaxial with the Si matrix, has high conductivity and is of good crystalline quality. The Si overlayer is of device quality. The thus produced heteroepitaxial structure can then be used to produce semiconductor devices, e.g., MOSFETs with a buried ground plane.

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