Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1982-02-22
1983-08-16
Rutledge, L. Dewayne
Metal working
Method of mechanical manufacture
Assembling or joining
29588, 29589, 323368, 338 32H, 357 27, H01L 4304
Patent
active
043983421
ABSTRACT:
A Hall effect device comprises a thin substrate free epitaxially grown semiconductor body mounted in a magnetically permeable, e.g. ferrite, housing. The layer, which is preferably gallium arsenide or gallium indium arsenide, is grown on a substrate which, after device processing is complete, is removed by a selective etching process. In view of the relatively high sensitivity and good noise characteristics such a device with its flux concentrator is small, since the flux concentrators are themselves much smaller than with conventional Hall effect systems. Other semiconductor materials from which the novel thin Hall effect devices can be made include silicon.
REFERENCES:
patent: 3845445 (1974-10-01), Braun et al.
patent: 4021767 (1977-05-01), Nonaka et al.
Greene Peter D.
Pitt Gillies D.
Thrush Edward J.
Whysall David H.
International Standard Electric Corporation
Lee, Jr. Robert E.
O'Halloran John T.
Rutledge L. Dewayne
Schiavelli Alan E.
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