Method of making a Group II-VI compound semiconductor device by

Details Method of making a Group II-VI compound semiconductor device by Method of making a Group II-VI compound semiconductor device by

1987-11-19

1988-11-08

Ozaki, George T.

Fishing, trapping, and vermin destroying

156605, 156607, 156624, 437167, 437905, 357 17, H01L 21368

Patent

active

047834269

ABSTRACT:
A semiconductor device made of a II-VI compound semiconductor and having a p type semiconductor crystal. The p type semiconductor crystal is one obtained by growing the II-VI compound semiconductor crystal by relying on a liquid phase crystal growth process using a solvent comprised of one of Group II and Group VI elements constituting the Group II-VI compound semiconductor and having a higher vapor pressure over the other of these elements in an atmosphere comprised of the other of the elements having a lower vapor pressure under controlled vapor pressure of the atmosphere, and by doping into the solvent a p type impurity element selected from Group Ia and Ib elements in an amount of a range from 1.times.10.sup.-3 to 5.times.10.sup.-1 mol %. Thus, p type semiconductor crystals for use in semiconductor devices can be obtained easily from II-VI compound semiconductors. The present invention is especially effective in ZnSe crystals.

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