Method of making a gated isolated structure

Details Method of making a gated isolated structure Method of making a gated isolated structure

1988-01-15

1989-07-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 45, 437 48, 437 51, 437 56, 437 61, H01L 21265, H01L 2170

Patent

active

048493660

ABSTRACT:
The invention relates to a radiation hardened (R-H) bulk complementary metal oxide semiconductor (CMOS) isolation structure and a process for its formation. The isolation structure may be automatically generated from the original thin oxide layer of any commercial product by computer aided design and basically comprises a grounded MOS gate surrounding the active areas. The grounded MOS gate replaces the conventional LOCOS field oxide and consists of novel oxide-silicon nitride-oxynitride gate insulator and a CVD polysilicon film. The radiation resistance of this gated isolated structure (GIS) is suitable for application in radiation-immunity VLSI integrated circuit (.ltoreq.2 .mu.m design rule).

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