Method of making a gap UV photodiode by multiple ion-implantatio

Details Method of making a gap UV photodiode by multiple ion-implantatio Method of making a gap UV photodiode by multiple ion-implantatio

1977-10-14

1979-02-27

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148186, 148187, 357 30, 357 61, 357 91, H01L 3300, H01L 21205, H01L 2714

Patent

active

041417569

ABSTRACT:
An ultraviolet sensitive photodiode is formed in a body of first conductivity type GaP. A region of second conductivity type with a graded impurity distribution is formed in the body, and a thin layer (preferably about 100A to 300A) is then removed from the front surface of the body. The removal of the thin layer significantly enhances the performance of the UV sensitive photodiode.

REFERENCES:
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patent: 4001864 (1977-01-01), Gibbons
patent: 4027319 (1977-05-01), Borrello et al.
patent: 4034396 (1977-07-01), Nakamura et al.
Berkeliev et al., "Photodetectors . . . GaAs.sub.1-x P.sub.x. . . ", Sov. Phys. Semicond. (English), vol. 10, (1976), 908.
Beyer et al., "Elimination of Stacking Faults", IBM-TDB, 19 (1977) 3051.
Beyer et al., "Lower Defects . . . in . . . Devices", IBM-TDB, 20 (1977) 1003.
Queisser, "Adv. . . . Optical Analysis of S/C Materials", Appl. Phys. 10 (1976) 275.
Learn et al., ". . . Ion-Impln. on Charges . . . Si/SiO.sub.2 System", J. Appl. Phys. 48, (1977) 308.
Hess et al., ". . . Impln. . . . Induced Interface States in Si/SiO.sub.2 System," J. Appl. Phys. 48 (1977) 834.

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