Method of making a gallium nitride light-emitting diode

Details Method of making a gallium nitride light-emitting diode Method of making a gallium nitride light-emitting diode

1983-03-31

1984-10-16

Hearn, Brian E.

Metal working

Plural diverse manufacturing apparatus including means for...

Common reciprocating support for spaced tools

29576E, 29583, 29589, 148175, H01L 2120, H01L 3300

Patent

active

044766203

ABSTRACT:
The substrate of a gallium nitride light-emitting diode is made rough at given positions on the surface thereof, or an insulating film strip pattern is attached on the surface of the substrate prior to growing an n-type conductive gallium nitride layer and a semi-insulating gallium nitride layer thereon. As a result, high conductivity regions are formed in the semi-insulating layer at positions corresponding to the rough surfaces or the insulating film strip pattern in such a manner that each of the high conductivity region extends from the n-type conductive layer to the upper surface of the semi-insulating layer so as to function as a conductor to be connected to an electrode. In the same manner similar high conductive regions are made along kerf portions in a diode wafer, preventing each diode chip from being damaged on cutting.

REFERENCES:
patent: 4316208 (1982-02-01), Kobayashi et al.

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