Method of making a gallium arsenide phosphide-, mixed crystal-ep

Details Method of making a gallium arsenide phosphide-, mixed crystal-ep Method of making a gallium arsenide phosphide-, mixed crystal-ep

1989-07-20

1990-11-06

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 81, 437133, H01L 2120, H01L 21203

Patent

active

049686429

ABSTRACT:
An epitaxial wafer for producing arrays of GaAsP-LEDs comprises, in the GaAs.sub.1-x P.sub.x layer with varying X, a layer region(s) with a discontinuous variance of x along the thickness of the GaAs.sub.1-x P.sub.x layer. This layer region(s) contribute to a uniformity in the brightness of the light emission of LEDs formed in the epitaxial wafer.

REFERENCES:
patent: 3867202 (1975-02-01), Ichiki et al.
patent: 3963538 (1976-06-01), Broodie et al.
patent: 3963539 (1976-06-01), Kernlage et al.
patent: 4378259 (1983-03-01), Hasegawa et al.
patent: 4438446 (1984-03-01), Tsang
patent: 4495514 (1985-01-01), Lawrence et al.
patent: 4510515 (1985-04-01), Kajita et al.
patent: 4561915 (1985-12-01), Mito
patent: 4616241 (1986-10-01), Biefeld et al.
Huber et al., "Preparation of Epitaxial GaAs.sub.1-x P.sub.x Layers Using a Solid GaAs . . . ," Siemens Forschungs--u. Entwickl. Ber. Bd. 3, 1974, pp. 55-60.

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