Method of making a GaAs-based laser comprising a facet coating w

Details Method of making a GaAs-based laser comprising a facet coating w Method of making a GaAs-based laser comprising a facet coating w

1996-07-31

1997-09-16

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Substrate dicing

372 49, 438 46, H01L 2120

Patent

active

056680490

ABSTRACT:
In a method of making a GaAs-based semiconductor laser, a fully processed wafer is cleaved, typically in the ambient atmosphere, into laser bars, the laser bars are loaded into an evacuable deposition chamber (preferably an ECR CVD chamber) and exposed to a H.sub.2 S plasma. Following the exposure, the cleavage facets are coated in the chamber with a protective dielectric (preferably silicon nitride) layer. The method can be practiced with high through-put, and can yield lasers (e.g., 980 nm pump lasers for optical fiber amplifiers) capable of operation at high power.

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"Infrared Microscopy Studies on High-Power InGaAs-GaAs-InGaP Lasers with Ga.sub.2 O.sub.3 Facet Coatings", by M. Passlack, IEEE Journal of Selected Topics in Quantum Electronics, vol. 1, No. 2, Jun. 1995, p. 110.
"Simple Method for Examining Sulphur Passivation of Facets in InGaAs-AlGaAs (.lambda.=0.98 .mu.m) laser diodes", by G. Beister et al., Appl. Phys. Lett., vol. 68 (18), 29 Apr. 1996, pp. 2467-2468.

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