Etching a substrate: processes – Gas phase and nongaseous phase etching on the same substrate
Reexamination Certificate
2003-10-03
2010-02-16
Tran, Binh X (Department: 1792)
Etching a substrate: processes
Gas phase and nongaseous phase etching on the same substrate
C216S091000, C216S102000
Reexamination Certificate
active
07662301
ABSTRACT:
A method of producing a free standing structure, the method comprising: providing a substrate having a raised pattern formed on a surface of said substrate, said raised pattern comprising at least one material which forms said surface; depositing material over said raised pattern; and dissolving said substrate to release said deposited material to form said free standing structure from said released deposited material.
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Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tran Binh X
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