Method of making a force detecting sensor

Details Method of making a force detecting sensor Method of making a force detecting sensor

1994-06-14

1995-06-13

Nguyen, Nam

Fishing, trapping, and vermin destroying

437 90, 437165, 313352, H01L 2120

Patent

active

054242410

ABSTRACT:
A force detecting microsensor comprises a single crystal Si substrate, a single crystal cone formed on the substrate and a resilient electrode mounted above the tip of the Si cone. The space between the tip of the Si cone and the resilient electrode is maintained in a vacuum environment and the distance between the tip and the resilient anode is in the order of a few atomic diameters. The tunneling effect of electrons occurs between the tip of the Si cone and the resilient electrode when a potential is applied to the resilient electrode and the Si cone tip. The resilient electrode deflects as a result of the force acting on the microsensor. The deflection of the resilient electrode alters the electrical characteristics between the resilient electrode and the Si cone tip. The changes in the electrical characteristics can be measured to determine the level of force acting on the microsensor. The process for making the microsensor according to the invention comprises the steps of forming an insulating layer and support layer on the substrate, forming a recess in the insulating layer and aperture in the support layer, depositing a single crystal Si cone on the substrate and fully enclosing the Si cone within the recess of the support layer and the insulating layer.

REFERENCES:
patent: 3665241 (1972-05-01), Spindt et al.
patent: 3755704 (1973-08-01), Spindt et al.
patent: 3789471 (1974-02-01), Spindt et al.
patent: 3812559 (1974-05-01), Spindt et al.
patent: 4141405 (1979-02-01), Spindt
patent: 4566023 (1986-01-01), Hansma et al.
patent: 4638669 (1987-01-01), Chou
patent: 4857799 (1989-08-01), Spindt et al.
patent: 4952526 (1990-08-01), Pribat et al.
patent: 5009111 (1991-04-01), West et al.
patent: 5015912 (1991-05-01), Spindt et al.
patent: 5048319 (1991-09-01), Neuhaus
patent: 5064396 (1991-11-01), Spindt
patent: 5079958 (1992-01-01), Takase et al.
patent: 5089292 (1992-02-01), MaCaulay et al.
patent: 5103682 (1992-04-01), Moreland et al.
patent: 5162255 (1992-11-01), Ito et al.
patent: 5163328 (1992-11-01), Holland et al.
Knodle, "MBE to Set Standard for Epitaxial Deposition?", Research & Development, vol. 28, p. 73, Aug. 1986.
Studt, "Grow and Analyze Complex Materials Like Never Before", Research and Development, vol. 32, No. 5, p. 88, May 1990.
Kenney et al., "A Micromachined Silicon Electron Tunneling Sensor", IEEE, pp. 192-196, 1990.
Lee and Huang, "A Theoretical Study on Field Emission Array for Microsensors", IEEE Transactions on Electron Devices, vol. 39, No. 2, pp. 313-324, Feb. 1992.

Affiliated with

Also associated with

Rating

Method of making a force detecting sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a force detecting sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a force detecting sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1308919