Method of making a floating gate memory cell

Fishing – trapping – and vermin destroying

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437 52, 437983, 437 69, 357 235, H01L 21283, H01L 21316

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active

047359196

ABSTRACT:
A method of making a floating gate memory cell which relies on control gate to floating gate conduction to charge and discharge the floating gate. The gate oxide and inter-level dielectric thicknesses are independently controlled by using a mask which can compensate for the different substrate and floating gate oxidation rates.

REFERENCES:
patent: 4162504 (1979-07-01), Hsu
patent: 4274012 (1981-06-01), Simko
patent: 4314265 (1982-02-01), Simko
patent: 4334347 (1982-06-01), Goldsmith et al.
patent: 4404577 (1983-09-01), Cranford, Jr. et al.
patent: 4409723 (1983-10-01), Harari
patent: 4426764 (1984-01-01), Kosa et al.
patent: 4486769 (1984-12-01), Simko
patent: 4488931 (1984-12-01), Pansana
patent: 4495693 (1985-01-01), Iwahashi et al.
patent: 4519849 (1985-05-01), Korsh et al.
patent: 4683640 (1987-08-01), Faraone

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