Method of making a flip-chip bonded GaAs-based opto-electronic d

Details Method of making a flip-chip bonded GaAs-based opto-electronic d Method of making a flip-chip bonded GaAs-based opto-electronic d

1996-07-29

1999-07-13

Niebling, John F.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438 29, 438 32, H01L 2120

Patent

active

059239514

ABSTRACT:
In a method of making a flip-chip bonded GaAs-based opto-electronic device, removal of the GaAs substrate is facilitated by provision of a lattice matched (Al.sub.x Ga.sub.1-x)InP etch stop layer, exemplarily a Ga.sub.0.51 In.sub.0.49 P layer, and use of an etchant that isotropically etches GaAs such that an essentially mirror-like etch stop layer surface results, and that preferably exhibits an etch rate ratio of at least 200:1 for GaAs and the etch stop layer, respectively. Use of the novel substrate removal method can substantially increase device yield, and facilitate manufacture of large device arrays, e.g., arrays of detector/modulator diodes flip-chip bonded to Si CMOS chips.

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