Fishing – trapping – and vermin destroying
Patent
1995-05-23
1996-07-02
Quach, T. N.
Fishing, trapping, and vermin destroying
437 40, 437154, H01L 21335, H01L 2120
Patent
active
055321798
ABSTRACT:
A DMOS field effect transistor having its gate electrode located in a trench includes a lightly doped epitaxial layer overlying the usual epitaxial layer. The trench penetrates only part way through the upper epitaxial layer which is more lightly doped than is the underlying lower epitaxial layer. The lightly doped upper epitaxial layer reduces the electric field at the bottom of the trench, thus protecting the gate oxide from breakdown during high voltage operation. Advantageously the upper portion of the lightly doped upper epitaxial layer has little adverse effect on the transistor's on resistance.
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Chang Mike F.
Hshieh Fwu-Iuan
Kwan Sze-Hon
Owyang King
Klivans Norman R.
Quach T. N.
Siliconix incorporated
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