Method of making a field effect transistor with short channel le

Details Method of making a field effect transistor with short channel le Method of making a field effect transistor with short channel le

1990-10-31

1992-02-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437162, 437913, H01L 21265, H01L 21225

Patent

active

050894358

ABSTRACT:
For preventing a field effect transistor from driftage of the threshold voltage due to injection of hot carriers, there is disclosed a field effect transistor fabricated on a semiconductor substrate and comprising a thin dielectric film with two openings covering the major surface and having a portion serving as a gate insulating film, a gate electrode formed on the portion of the thin dielectric film and covered with an isolation film, first and second lightly doped impurity regions formed in the semiconductor substrate in spacing relationship from each other and having respective edge portions located below the two side portions of the gate electrode, respectively, side walls projecting from the isolation film covering the two side portions, respectively, and directly contacting the major surface through the two openings, respectively, and first and second heavily doped impurity regions formed in the semiconductor substrate partially overlapped with the first and second lightly doped impurity regions, respectively, and the first and second heavily doped impurity regions have respective edge portions located below the leading ends of the side walls, respectively, to form an LDD-structure, so that the injected hot carriers are discharged to the lightly doped impurity regions by virtue of the direct contacts between the side walls and the lightly doped impurity regions.

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