Method of making a field effect transistor

Details Method of making a field effect transistor Method of making a field effect transistor

1995-05-22

1996-11-26

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 41, 437 44, 437 40, H01L 21266, H01L 21335

Patent

active

055785093

ABSTRACT:
A method for producing a field effect transistor including source and drain regions produced by implanting a dopant impurity employing a gate electrode as a mask includes producing a gate electrode at a region on a first conductivity type semiconductor substrate; implanting a dopant impurity producing a second conductivity type in the substrate employing the gate electrode as a mask, thereby producing source and drain regions having a first dopant impurity concentration; producing a photoresist pattern on the substrate covering a drain electrode side of the substrate and having an aperture at a source electrode side of the substrate on the opposite side of the gate electrode from the drain electrode side and implanting a dopant impurity producing the second conductivity type in the substrate employing the photoresist pattern as a mask, thereby converting the source region from a first dopant impurity concentration to a second, high dopant impurity concentration; and diagonally rotatingly implanting in the substrate a dopant impurity producing the first conductivity type employing the photoresist pattern as a mask, thereby producing a first conductivity type region with a higher dopant impurity concentration than the substrate that surrounds the source region.

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