Method of making a FET having a recessed gate structure

Details Method of making a FET having a recessed gate structure Method of making a FET having a recessed gate structure

1996-01-22

1997-03-11

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437126, 437203, 437912, 437944, H01L 21265, H01L 2120, H01L 2144, H01L 2148

Patent

active

056100906

ABSTRACT:
A Field Effect Transistor having a recessed gate comprises a substrate, a source electrode and a drain electrode, a recessed channel region formed over an area of the semiconductor substrate between the source electrode and the drain electrode, and a gate electrode inclined toward the source electrode and formed over the recessed channel portion.

REFERENCES:
patent: 3813585 (1974-05-01), Tarui et al.
patent: 3898353 (1975-08-01), Napoli et al.
patent: 3920861 (1975-11-01), Dean
patent: 4393557 (1983-07-01), Pao et al.
patent: 4517730 (1985-05-01), Meignant
patent: 4525919 (1985-07-01), Fabian
patent: 4578343 (1986-03-01), Kosemura et al.
patent: 4616400 (1986-10-01), Macksey et al.
patent: 4895810 (1990-01-01), Meyer et al.
patent: 4927782 (1990-05-01), Davey et al.
patent: 4970386 (1990-11-01), Buck
patent: 5019522 (1991-05-01), Meyer et al.
patent: 5045903 (1991-09-01), Meyer et al.
patent: 5112763 (1992-05-01), Taylor et al.
patent: 5120668 (1992-06-01), Hsu et al.
patent: 5181087 (1993-01-01), Usagawa et al.
patent: 5266146 (1993-11-01), Ohno et al.
patent: 5338703 (1994-08-01), Matsuoka

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