Method of making a fast IGFET

Fishing – trapping – and vermin destroying

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437 57, 437 58, 437149, 437152, 357 42, 357 91, 357 235, H01L 21265

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active

047450835

ABSTRACT:
An integrated circuit including CMOS transistors and an EPROM device by a method including selectively implanting threshold adjusting atoms of P-type in the channel regions of the N-type transistors while exposing the whole device area of the P-channel transistor. Subsequently, the sources and drains of the N-channel transistors are selectively implanted using the gates as a self-aligning mask portion. The PN-junction capacitance of the sources and drains of the N-channel transistors are thereby kept low and not subject to the degrading effects of the threshold adjusting implant. The P-channel is also affected and source drain capacitances there are reduced so that the speed of all three types of transistors are enhanced. Only high-yield process steps are included.

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