Method of making a dual DMOS device by ion implantation and diff

Details Method of making a dual DMOS device by ion implantation and diff Method of making a dual DMOS device by ion implantation and diff

1980-01-23

1981-07-28

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 357 23, 357 91, H01L 744, H01L 2126

Patent

active

042808553

ABSTRACT:
A diffused MOS (DMOS) device and method for making same are disclosed. The prior art DMOS device is improved upon by ion implanting a depletion extension L.sub.D to the drain. However, the introduction of the depletion extension L.sub.D introduces a manufacturing statistical variation in the characteristics of the resultant devices so produced. The problem of the effects of the variations in the length L.sub.D and thus, variations in the resulting transconductance of the device, is solved by placing two of these devices in parallel. When one device has its L.sub.D relatively shorter, the companion device will also have its L.sub.D correspondingly longer. The method of producing the dual devices is by ion implanting a single conductivity region which forms the L.sub.D for both the left- and right-hand channels for the left- and right-hand DMOS structures. If the mask for the ion-implanted region is misaligned slightly to the right, then the effective L.sub.D for the right-hand channel is somewhat longer but the effective L.sub.D for the left-hand channel is correspondingly shorter, so that the net parallel transconductance for the two devices remains the same as the transconductance for a perfectly symmetric ion-implanted region.

REFERENCES:
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Oleszek et al., IBM-TDB 21, (1978), 681.
Crowder et al., IBM-TDB 19, (1976), 2787.
Krick et al., IBM-TDB 15, (1972), 1884.

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