Method of making a dram cell with stacked capacitor

Details Method of making a dram cell with stacked capacitor Method of making a dram cell with stacked capacitor

1990-08-01

1991-06-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 51, 437 60, 437193, 437195, 437228, 437233, 437235, 437919, H01L 2170

Patent

active

050213571

ABSTRACT:
A dynamic random access memory device includes a storage capacitor having a plurality of stacked conductive films which form a storage electrode. A gap is formed between elevationally adjacent conductive films so as to surround the storage electrode. A gap is also formed between an insulating film which covers a gate electrode for insulation and a lowermost film of the storage electrode. Connection between the adjacent films may be established so that an uppermost film elevationally extends so as to make contact with a drain region. Also, connection can be established so that an upper film is mounted directly on an lower film. An end portion of the film may be thicker than the other portion thereof. The stacked film structure may be produced by alternatively forming a film made of a material different from the insulating film covering the gate electrode, and a conductive film.

REFERENCES:
patent: 4649406 (1987-03-01), Takemae et al.
patent: 4700457 (1987-10-01), Matsukawa
patent: 4742018 (1988-05-01), Kimura et al.
patent: 4855801 (1989-08-01), Kaesters

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