Method of making a double heterojunction diode laser

Metal treatment – Compositions – Heat treating

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331 945H, 357 91, H01L 2126

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039363228

ABSTRACT:
A method for improving the current confinement capacity of a double heterojunction laser by using a high energy implantation of oxygen in the regions of an injection laser surrounding the active region of such laser so as to make such regions semi-insulating.

REFERENCES:
patent: 3245002 (1966-04-01), Hall
patent: 3617929 (1971-11-01), Strack et al.
patent: 3622382 (1971-11-01), Brack et al.
patent: 3649369 (1972-03-01), Hunsperger et al.
patent: 3691476 (1972-09-01), Hayashi
"Ion Implantation in Semiconductors and other Materials", Favennec et al., B. L. Crowder, Ed., Plenum Press, New York, 1973, pp. 621-630.

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