Method of making a diffused lightly doped drain device with buil

Details Method of making a diffused lightly doped drain device with buil Method of making a diffused lightly doped drain device with buil

1995-05-05

1996-05-21

Dang, Trung

Fishing, trapping, and vermin destroying

437 41D, 437 40, 437149, 437153, 437154, 437160, 437164, 148DIG144, H01L 21265

Patent

active

055189458

ABSTRACT:
A method of fabricating a lightly doped drain MOSFET device with a built in etch stop is disclosed. After forming a gate electrode on a substrate through conventional methods, a conformal doped layer is deposited on the gate electrode. A conformal layer of nitride is then deposited on the conformal doped layer. The nitride layer is etched, with the etch stopping on the conformal doped layer, thereby forming nitride spacers. Deep source and drain regions are formed by either ion implantation or diffusion. The device is then heat treated so that light diffusion occurs under the nitride spacers and heavy diffusion occurs outside the spacer region. The method is applicable to N-substrate (P-channel), P-substrate (N-channel), and complementary metal oxide semiconductor (CMOS) devices.

REFERENCES:
patent: 4204894 (1980-05-01), Komeda et al.
patent: 4209350 (1980-06-01), Ho et al.
patent: 4240845 (1980-12-01), Esch et al.
patent: 4502202 (1985-03-01), Malhi
patent: 4546535 (1985-10-01), Shepard
patent: 4597824 (1986-07-01), Shinada et al.
patent: 4603468 (1986-08-01), Lam
patent: 4628589 (1986-12-01), Sundaresan
patent: 4837179 (1989-06-01), Foster et al.
patent: 4912061 (1990-03-01), Nasr
patent: 4996168 (1991-02-01), Ozaki et al.
patent: 5024959 (1991-06-01), Pfiester
patent: 5032532 (1991-07-01), Mori et al.
patent: 5179034 (1993-01-01), Mori et al.
patent: 5262339 (1993-11-01), Mori et al.
patent: 5324686 (1994-06-01), Tsunashima
patent: 5434444 (1995-07-01), Yoshitomi et al.
C. S. Oh et al.; "Simultaneous Formation of Shallow-Deep Stepped Source/Drain for Sub-Micron CMOS", 1988.
Tomohisa Mizuno et al.; "Si.sub.3 N.sub.4 /SiO.sub.2 Spacer Induced High Reliability in LDDMOSFET and Its Simple Degradation Model", 1988 International Electron Devices Meeting, Dec. 1988.

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