Method of making a diamond shaped gate mesh for cellular MOS tra

Details Method of making a diamond shaped gate mesh for cellular MOS tra Method of making a diamond shaped gate mesh for cellular MOS tra

1994-09-27

1995-09-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 48, H01L 21265

Patent

active

054478766

ABSTRACT:
A cellular transistor structure is disclosed which incorporates a polysilicon gate mesh. In one embodiment, the silicon under the polysilicon is of an N-type while the exposed area not covered by the polysilicon is doped with a P dopant to form P-type source and drain regions. Metal strips are used to contact the rows of source and drain cells. By forming the openings in the polysilicon mesh to be in a diamond shape (i.e., having a long diagonal and a short diagonal), the source and drain metal strips, arranged in the direction of the short diagonals, can be made wider and shorter, thus reducing the on-resistance of the transistor without increasing the area of the transistor.

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patent: 4821084 (1989-04-01), Kinugasa et al.
patent: 4833521 (1989-05-01), Early
patent: 5358902 (1994-10-01), Verhaar et al.

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