Method of making a device with protection from short circuits be

Fishing – trapping – and vermin destroying

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437 74, 437148, 148DIG70, H01L 21266

Patent

active

053729552

ABSTRACT:
A method of manufacture of a MOSFET device with a predetermined light positive or negative doping comprises forming a first mask upon said substrate. Dopant of a predetermined positive or negative variety is implanted through the mask. A second mask is formed over the openings in the first mask. The first mask is removed. Dopant of the opposite positive or negative variety is implanted into the openings in the second mask. The process forms a pattern of positive and negative wells in the substrate, and forms a guard ring of an opposite doping variety from the wells being protected formed in the substrate.

REFERENCES:
patent: 4912054 (1990-03-01), Tomassetti
patent: 5106769 (1992-04-01), Matsumi
patent: 5208171 (1993-05-01), Ohmi
S. M. Sze, "VLSI Technology", published by McGraw-Hill International-Singapore, 1988, pp. 486-491.

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