Method of making a cubic boron nitride bipolar transistor

Details Method of making a cubic boron nitride bipolar transistor Method of making a cubic boron nitride bipolar transistor

1992-02-03

1993-07-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437104, 437107, 437 19, 148DIG11, 148DIG113, H01L 21265

Patent

active

052273180

ABSTRACT:
A bipolar transistor is formed from epitaxial cubic boron nitride grown on a silicon substrate which is a three to two commensurate layer deposited by pulsed laser evaporation techniques. The thin film, cubic boron nitride bipolar transistor is in epitaxial registry with an underlying single crystal silicon substrate. The bipolar transistor is particularly suitable for high temperature applications.

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