Method of making a contact to a trench isolated device

Details Method of making a contact to a trench isolated device Method of making a contact to a trench isolated device

1986-03-27

1988-02-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 33, 437225, 437187, 437235, H01L 21302

Patent

active

047255625

ABSTRACT:
A method or process is provided for making a semiconductor structure which includes the steps of forming in a semiconductor body a P/N junction and an opening in an insulating layer disposed on the surface of the semiconductor body. A trench is then formed in the semiconductor layer having a sidewall located along a given plane through the opening and through the P/N junction. An insulating material is disposed within the trench and over the insulating layer and a block or segment of material is located over the trench so as to extend a given distance from the trench over the upper surface of the body. The insulating material and the block are then etched so as to remove the block and the insulating material located along the sides of the block. A layer of low viscosity material is formed over the semiconductor body so as to cover the remaining portion of the insulating material, the layer of low viscosity material and the insulating material having similar etch rates. The layer of low viscosity material and the insulating material are then simultaneously etched directionally until all of the layer of low viscosity material is removed. Metallic contacts may now be formed on the surface of the semiconductor body without the concern that the metallic material will seep or enter into the trench causing a short at the P/N junction.

REFERENCES:
patent: 3385729 (1968-05-01), Larchain
patent: 3603820 (1971-09-01), Schuenemann
patent: 4048649 (1977-09-01), Bohn
patent: 4110779 (1978-08-01), Rathbone
patent: 4174252 (1979-11-01), Kressel et al.
patent: 4196440 (1980-04-01), Anantha
patent: 4242156 (1980-12-01), Peel
patent: 4369565 (1983-01-01), Muramatsu
patent: 4519128 (1985-05-01), Chesebro et al.
patent: 4534826 (1985-08-01), Gath et al.
patent: 4541168 (1985-09-01), Galie et al.
patent: 4549927 (1985-10-01), Gath et al.
patent: 4589193 (1986-05-01), Gath et al.
patent: 4599136 (1986-07-01), Araps et al.
M. D. Hulvey et al, IBM Technical Disclosure Bulletin, vol. 24, No. 11A, Apr. 1982, pp. 5458-5459, "Dielectric Isolation Process".
I. Antipox, IBM Technical Disclosure Bulletin, vol. 23, No. 11, Apr. 1981, pp. 4917-4919, "Prevention of Birdsbeak Formation".
P. M. Schaible et al, IBM Technical Disclosure Bulletin, vol. 17, No. 10, Mar. 1975, pp. 2893-2894, "Forming Sidewall Dielectric Isolation of Integrated Circuit Devices".
Dougherty, J.J. US patent application SN 06/793400 filed 10/85.

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