Method of making a contact hole in a semiconductor device

Details Method of making a contact hole in a semiconductor device Method of making a contact hole in a semiconductor device

1995-06-27

1997-07-01

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437228, 1566561, H01L 21311

Patent

active

056438338

ABSTRACT:
A method of manufacturing a semiconductor device with multi-layer interconnections is disclosed. The method includes the steps of: forming a first electrically conductive interconnection layer on an insulating layer formed on a lower interconnection layer; forming an insulating layer on the first electrically conductive interconnection layer; forming an antireflection layer on the insulating layer; patterning the first electrically conductive interconnection layer, the insulating layer and the antireflection layer to form a stacked film composed of the first electrically conductive interconnection layer, the insulating layer and the antireflection layer; forming a sidewall on the stacked film; forming an interlayer insulating layer on entire surface of the stacked film having the sidewall formed thereon and the insulating layer; forming a contact hole to expose a selected portion of the lower interconnection layer using the sidewall as a mask; and depositing a second electrically conductive interconnection layer in the contact hole at the exposed portion of the lower interconnection layer.

REFERENCES:
patent: 3884698 (1975-05-01), Kakihama et al.
patent: 4070689 (1978-01-01), Coleman et al.
patent: 4795501 (1989-01-01), Stanbery
patent: 5037777 (1991-08-01), Mele et al.
patent: 5130259 (1992-07-01), Bahraman
patent: 5441914 (1995-08-01), Taft et al.
patent: 5486719 (1996-01-01), Sugiura et al.
Z. Chen et al., IEEE Trans. Electron Dev., 40 (6) (1993) 1161, ". . . SiO2/SiN Antireflection Coating for Si Solar Cells" Jun. 1993.
R. Mehrorta et al., SPIE Proc. Abstract, 1463 (1991) 487, "Reduction of the Standing Wave Effect . . . " Mar. 1991.
K.H. Kusters et al, Symp. VLSI Technol. 1987, p. 93, "A High Density 4Mbit dRAM Process . . . " May 1987.
S. Subhanna et al., IEDM '93 Proc., p. 441, "A Novel Borderless Contact . . . " Dec. 1993.
Japanese Patent Abstract 06-005536, H. Tsukamoto, inventor.
S. Wolf "Silicon Processing For VLSI Era" vol. 2 1990, pp. 144-149, 398-399.
Transaltion of JP 4-206817.

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