Method of making a compound semiconductor layer of high resistiv

Details Method of making a compound semiconductor layer of high resistiv Method of making a compound semiconductor layer of high resistiv

1974-01-25

1976-02-03

Rosenberg, Peter D.

Metal treatment

Compositions

Heat treating

H01L 2100

Patent

active

039363210

ABSTRACT:
A method is provided for making a semiconductor layer having a high resistivity comprising the steps of implanting ions into a semiconductor comprising gallium and arsenic at a first acceleration voltage at a concentration higher than the limit of solid solubility of said ions in said semiconductor, the ions being of a material which forms a deep energy level in said semiconductor; implanting protons into said semiconductor at an acceleration voltage less than said first acceleration voltage; and then heating the semiconductor, for example, from 300.degree.C to 700.degree.C.

REFERENCES:
patent: 3718502 (1973-02-01), Gibbons
patent: 3824133 (1974-07-01), D'Asaro

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