Method of making a compound semiconductor laser

Details Method of making a compound semiconductor laser Method of making a compound semiconductor laser

1982-11-30

1985-01-29

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 29569L, H01L 21208

Patent

active

044964030

ABSTRACT:
In the manufacture of an InP/(In,Ga) (As,P) buried rib laser, the sides of the laser are profiled to have surfaces extending in {111} A planes down to the junction between the active and lower confining layers, and to have surfaces extending in other planes beneath this junction. In the subsequent epitaxial regrowth nucleation above this junction between the surfaces is discriminated against in favor of growth beneath this junction so that the regrowth up the sides of the rib is automatically temporarily arrested in the vicinity of this junction.

REFERENCES:
patent: 4276098 (1981-06-01), Nelson et al.
patent: 4287485 (1981-09-01), Hsieh
patent: 4326176 (1982-04-01), Aiki et al.
patent: 4354898 (1982-10-01), Coldren et al.
patent: 4355396 (1982-10-01), Hawrylo et al.
patent: 4366569 (1982-12-01), Hirao et al.

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