Method of making a complementary metal electrode semiconductor d

Details Method of making a complementary metal electrode semiconductor d Method of making a complementary metal electrode semiconductor d

1989-09-13

1991-03-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 45, 437178, 437912, H01L 2178

Patent

active

050028979

ABSTRACT:
A semiconductor device referred to as complementary metal electrode semiconductor (CMES) has p-type and n-type silicon MESFETs interconnected on a substrate with an n-type barrier enhancement implanted into the p-channel of the p-type MESFET. The structure and method of fabrication are provided for forming a CMES logic inverter which has characteristics of very low power, low voltage, low noise and high speed.

REFERENCES:
patent: 4393575 (1983-07-01), Dunkley et al.
patent: 4682055 (1987-07-01), Upadhyayula
Glasser and Dobberpuhl, "The Design and Analysis of VLSI Circuits," Addison-Wesley Publishing Co., Reading, MA, 1985, p. 226.
S. M. Sze, "Physics of Semiconductor Devices," John Wiley & Sons, New York, 1981, pp. 293-297.

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