Fishing – trapping – and vermin destroying
Patent
1994-05-12
1995-01-24
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 60, H01L 21265
Patent
active
053842740
ABSTRACT:
A method of making a semiconductor device having formed thereon an inductor comprises a silicon substrate. A cut out region is obtained by removing a part of the silicon substrate in a hollow shape which may be a hollow cavity or a hollow cavity with an insulating material having a low complex permittivity such as silicon oxide buried therein. An insulator layer is formed on the cut out region and on the periphery thereof. A connection layer serves as one of the leads of the inductor and is formed using an electric conductive material such as a metal or doped polycrystalline silicon. A contact hole is provided in the interlayer insulation layer. A connection layer serves as an inductor and the other lead of the inductor, which is formed using an electric conductive material such as a metal. A protective insulator layer is also provided on the top of the structure.
REFERENCES:
patent: 4896194 (1990-01-01), Suzuki
patent: 4959705 (1990-09-01), Lemnios et al.
patent: 5268315 (1993-12-01), Prasad et al.
Chang et al., Large Suspended Inductors on Silicon and Their Use in a 2-.mu.m CMOS RF Amplifier, IEEE Electron Device Letters, vol. 14, No. 5, May 1993, pp. 246-248.
Hearn Brian E.
Nippon Precision Circuits Inc.
Russell Michael
LandOfFree
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