Etching a substrate: processes – Nongaseous phase etching of substrate – Etching inorganic substrate
Patent
1996-04-26
1998-06-16
Chapman, Mark
Etching a substrate: processes
Nongaseous phase etching of substrate
Etching inorganic substrate
216105, 438694, 438703, 438754, H01L 2102
Patent
active
057664994
ABSTRACT:
A method of making a circuitized substrate wherein a dielectric layer is provided having a first layer of metallic material thereon. A first metallic member is formed on the dielectric's metallic layer, following which a pair of openings are precisely provided within a second dielectric material located on the dielectric. These openings in turn define a selected area on the first metallic member and, significantly, a precisely oriented pattern of the first metallic layer at a spaced distance from the metallic member. This metallic pattern serves as a mask to permit formation of an opening through the dielectric, which opening in turn may be engaged by tooling or the like such as may be used to position an electronic component, e.g., semiconductor device, on the underlying substrate. The invention thus assures precise orientation and placement of components such as semiconductor devices on highly dense circuit patterns such as those required in the present art in the manufacture of devices such as those of the information handling system (computer) variety.
REFERENCES:
patent: 3627902 (1971-12-01), Meyers et al.
patent: 4472238 (1984-09-01), Johnson
patent: 4517050 (1985-05-01), Johnson et al.
patent: 4581301 (1986-04-01), Michaelson
patent: 4585528 (1986-04-01), Matsumoto
patent: 4605471 (1986-08-01), Mitchell
patent: 4610756 (1986-09-01), Strobel
patent: 4661654 (1987-04-01), Strobel
patent: 4664962 (1987-05-01), DesMarais, Jr.
patent: 4872934 (1989-10-01), Kameda
patent: 4889584 (1989-12-01), Wada et al.
patent: 5218761 (1993-06-01), Maniwa et al.
patent: 5306874 (1994-04-01), Biron
patent: 5361491 (1994-11-01), Oomachi et al.
patent: 5489749 (1996-02-01), DiStefano et al.
patent: 5599747 (1997-02-01), Bhatt et al.
Blackwell Kim Joseph
Labzentis Daniel Peter
Reid Jonathan David
Chapman Mark
International Business Machines - Corporation
LandOfFree
Method of making a circuitized substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making a circuitized substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a circuitized substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1721378