Method of making a charge transfer device

Details Method of making a charge transfer device Method of making a charge transfer device

1977-10-12

1979-12-25

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29589, 357 24, B01J 1700

Patent

active

041797930

ABSTRACT:
A method of making a charge transfer device which has charge transfer portions arranged in a semiconductor substrate, each of said charge transfer portions having electrodes, and in which an effective asymmetrical potential is produced in each of the charge transfer portions in a carrier transfer direction by the affect of the potential of channel stopper regions upon charge transfer. The method has the steps of forming channel stopper regions, which define a charge transfer line, in the substrate, forming a first polycrystalline semiconductor layer which becomes a first gate electrode of every second charge transfer portion, forming a second polycrystalline semiconductor layer which becomes a second gate electrode of the other of every second charge transfer portion, and forming a portion which is extended from at least the channel stopper region and produces the asymmetrical potential, by selectively doping an impurity into the substrate with the first and second polycrystalline semiconductor layers as a doping mask.

REFERENCES:
patent: 3873371 (1975-03-01), Wolf
patent: 4019247 (1977-04-01), Borel
patent: 4035906 (1977-07-01), Tasch

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