Method of making a capacitor via chemical mechanical polish

Details Method of making a capacitor via chemical mechanical polish Method of making a capacitor via chemical mechanical polish

1997-05-22

1998-10-13

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438253, 438947, 438964, H01L 2120, H01L 218242

Patent

active

058211519

ABSTRACT:
A method of manufacturing a capacitor for use in semiconductor memories includes forming an undoped dot silicon layer on a doped polysilicon layer. Thermal oxidation is used to convert the dot silicon layer and portions of the doped polysilicon layer into silicon oxide. Then a CMP process is used to remove the oxidized dot silicon layer to create a silicon oxide etching mask. Next, an etching process is performed to form a large number of cavities in the doped polysilicon layer. The silicon oxide layer is then removed and the doped polysilicon layer is patterned and etched to form a bottom storage node of the capacitor.

REFERENCES:
patent: 5670406 (1997-09-01), Tseng
patent: 5670407 (1997-09-01), Tseng
patent: 5681774 (1997-10-01), Tseng

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