Method of making a bipolar transistor

Details Method of making a bipolar transistor Method of making a bipolar transistor

1985-08-06

1987-09-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

357 34, 357 2311, 357 54, 357 49, 437 63, H01L 2104

Patent

active

046953280

ABSTRACT:
A semiconductor device comprises a semiconductor substrate, an active region positioned in a portion of the substrate and a field insulating layer surrounding the active region and partially embedded in the substrate. The semiconductor device according to the present invention further comprises an insulating member positioned under and attached to the bottom of the field insulating layer and surrounding the active region with the field insulating layer. Because of this insulating member, the thickness of the field insulating layer can be reduced to a small value. Therefore, a PN junction formed in the active region can be terminated at the insulating member without any sharp curvature, that is, the PN junction can extend flatly. Further, silicon crystal near the field insulating layer has only a small amount of defects or no defect so that any abnormal diffusion of impurity near the field insulating layer can be prevented. An element such as a bipolar transistor formed in the active region can realize an increased breakdown voltage.

REFERENCES:
patent: 3648125 (1972-03-01), Peltzer
patent: 4135754 (1979-01-01), Chang et al.
patent: 4140558 (1979-02-01), Murphy et al.
patent: 4256514 (1981-03-01), Pogge
patent: 4269636 (1981-05-01), Rivoli et al.
patent: 4454646 (1984-06-01), Joy et al.
patent: 4454647 (1984-06-01), Joy et al.
Bassous et al., "Topology of Silicon Structures with Recessed SiO.sub.2 ", J. Electrochem. Soc., vol. 123, No. 11, Nov. 1976, pp. 1729-1737.

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