Method of making a bipolar transistor

Details Method of making a bipolar transistor Method of making a bipolar transistor

1975-09-29

1976-08-17

Tupman, W.

Metal working

Method of mechanical manufacture

Electrical device making

29576B, 357 91, B01J 1700

Patent

active

039745600

ABSTRACT:
A planar bipolar transistor is made by the successive ion implantations of selected atoms into selected regions of a layer of doped single-crystal silicon on an insulating substrate, such as sapphire or spinel. The silicon layer is epitaxially grown, has a thickness of between 0.5 and 5 .mu.m, and is formed in two strata of different resistivities. A collector contact well is ion implanted into the upper stratum and annealed to diffuse it into the lower stratum of lower resistivity. The transistor is isolated, as a mesa, on the substrate; and an edge-guard region is ion implanted through the periphery of the mesa, except in the region of the emitter-base junction.

REFERENCES:
patent: 3761319 (1973-09-01), Shannon
patent: 3770516 (1973-11-01), Duffy
patent: 3928082 (1975-12-01), Schwettmann
patent: 3945857 (1976-03-01), Schinella

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