Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1982-05-03
1985-03-12
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148175, 148188, 29578, 29591, 357 34, H01L 21225, H01L 21265, H01L 2128
Patent
active
045043329
ABSTRACT:
This invention provides a method for manufacturing a bipolar transistor which comprises steps of selectively forming in the surface of a semiconductor substrate an embedded layer of a conductivity type opposite to that of the substrate, covering the substrate with an insulating layer doped, at the surface thereof with an impurity in the superficial region thereof, removing by etching the insulating layer to form an opening portion through which part of the embedded layer is exposed, simultaneously forming by epitaxial growth a single-crystal semiconductor layer of the same conductivity type as that of the embedded layer on the embedded layer at the opening portion and a polycrystalline semiconductor layer on the insulating layer, diffusing by heating the impurity in the insulating layer into the polycrystalline semiconductor layer to provide a conductivity type opposite to that of the single-crystal semiconductor layer, and successively forming an internal base region and an emitter region in the single-crystal semiconductor layer. The invention also provided a bipolar transistor manufactured by the aforementioned method.
REFERENCES:
patent: 3600651 (1971-08-01), Duncan
patent: 3796613 (1974-03-01), Magdo et al.
patent: 3947299 (1976-03-01), Weijland et al.
patent: 4074304 (1978-02-01), Shiba
patent: 4101350 (1978-07-01), Possley et al.
patent: 4157269 (1979-06-01), Ning et al.
Saraswat et al., "A New Bipolar Process-Borsenic", IEEE Journal of Solid State Circuits, vol. SC-11, No. 4, Aug. 1978, pp. 495-499.
Ozaki G.
Vlsi Technology Research Association
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