Method of making a bipolar semiconductor device

Details Method of making a bipolar semiconductor device Method of making a bipolar semiconductor device

1986-01-08

1987-12-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

357 34, 437193, 437 31, 437247, H01L 2136, H01L 2138, H01L 2142, H01L 2100

Patent

active

047102411

ABSTRACT:
An n-type buried layer is selectively formed in a surface region of a p-type semiconductor substrate. At least one insulating film is formed on the semiconductor substrate. A first opening is formed on the buried layer in the insulating film. An n-type polycrystalline silicon layer is formed in the first opening connected to the buried layer. A second opening is formed on the buried layer of the insulating film. An n-type monocrystalline silicon layer is formed in the second opening connected to the buried layer. A p-type base region is formed in the monocrystalline silicon layer and a collector region is formed in the remaining portion of the monocrystalline silicon layer. An emitter region is selectively formed in the base region.

REFERENCES:
patent: 4157269 (1979-06-01), Ning et al.
patent: 4381953 (1983-05-01), Ho et al.
patent: 4396933 (1983-08-01), Magdo et al.
patent: 4462847 (1984-07-01), Thompson et al.
patent: 4578142 (1986-03-01), Corboy, Jr. et al.
patent: 4579621 (1986-04-01), Hine
patent: 4584025 (1986-04-01), Takaoka et al.
patent: 4592792 (1986-06-01), Corboy, Jr. et al.
Jap. J. of Applied Physics, vol. 21, No. 9, Sep. 1982, pp. 564-566, by Kohetsu Tanno et al., "Selective Silicon Epitaxy Using Reduced Pressure Technique".
J. Electrochem. Soc. Solid State Science and Technology, vol. 120, No. 5, pp. 664-668, by P. Rai-Choudhury et al., "Selective Silicon Epitaxy and Orientation Dependence of Growth".

Affiliated with

Also associated with

Rating

Method of making a bipolar semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a bipolar semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a bipolar semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1929519