Method of making a BIC memory cell having contact openings with

Details Method of making a BIC memory cell having contact openings with Method of making a BIC memory cell having contact openings with

1989-03-31

1991-12-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 41, 437170, 437228, 437235, H01L 2170

Patent

active

050752499

ABSTRACT:
A BIC memory cell device comprises a first insulating layer covering a MOS structure, a first penetrating opening in the first insulating layer in correspondence to a drain region and defined by an inclined first side wall which defines the diameter of the first opening such that the diameter increases towards a top surface of the first insulating layer, a second penetrating opening in the first insulating layer in correspondence to a source region and defined by a second side wall having a straight vertical cross section, a third penetrating opening in the first insulating layer in correspondence to a gate electrode and defined by a third side wall having a straight vertical cross section, a second insulating layer provided on the first insulating layer in correspondence to the drain region, a first wiring electrode deposited such that the second insulating layer is sandwiched between the first wiring electrode and the drain region, and second and third wiring electrodes contacting with the source region and the gate electrode.

REFERENCES:
patent: 3969150 (1976-07-01), Luce
patent: 4282647 (1981-08-01), Richman
patent: 4288256 (1981-09-01), Ning et al.
patent: 4388147 (1983-06-01), Engel
patent: 4442591 (1984-04-01), Haken
patent: 4453325 (1984-06-01), Razouk
patent: 4498224 (1985-02-01), Maeguchi
patent: 4637124 (1987-01-01), Okuyama
"A New Programmable Cell Utilizing Insulator Breakdown", Sato et al, IEDM 85, pp. 639-642, 1985.

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