Method of making a beveled semiconductor silicon wafer

Details Method of making a beveled semiconductor silicon wafer Method of making a beveled semiconductor silicon wafer

1991-01-16

1992-05-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437249, 437947, H01L 21463

Patent

active

051107643

ABSTRACT:
A semiconductor silicon wafer usable for integrated circuits has beveled portions unsymmetrically formed along circumferential edges of front and back surfaces thereof. An angle between an inclining surface of the beveled portion and a main surface on the back surface side is larger than that between the inclining surface of the beveled portion and the main surface on the front surface side. Therefore the circumferential edges are prevented from being chipped.

REFERENCES:
patent: 4630093 (1986-12-01), Yamaguchi et al.
patent: 4783225 (1988-11-01), Maejima et al.
Mendel, E. & Sullivan, P., "Reduction of Grinding and Lapping Defects", IBM Tech. Disc. Bull., vol. 25, No. 9, p. 4761, Feb. 1983.
Brieger, K. P. et al., "The Influence . . . Bevel Angle . . . Device", IEEE Trans. on Electron Devices, vol. ED-31, No. 6, pp. 733-738, Jun. 1984.

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