Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2011-03-01
2011-03-01
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
C257S068000, C257S288000, C257S900000, C257SE29264
Reexamination Certificate
active
07897994
ABSTRACT:
A method of forming an integrated circuit device that includes a plurality of MuGFETs is disclosed. A PMOS fin of a MuGFET is formed on a substrate. The PMOS fin includes a channel of a first surface of a first crystal orientation. A NMOS fin of another MuGFET is formed on the substrate. The NMOS fin includes a channel on the substrate at one of 0° and 90° to the PMOS fin and includes a second surface of a second crystal orientation.
REFERENCES:
patent: 2007/0052027 (2007-03-01), Ke et al.
patent: 2008/0079003 (2008-04-01), Shaheen et al.
Cleavelin Cloves Rinn
Pinto Angelo
Wise Rick L.
Xiong Weize
Brady III Wade J.
Franz Warren L.
Garcia Joannie A
Richards N Drew
Telecky , Jr. Frederick J.
LandOfFree
Method of making (100) NMOS and (110) PMOS sidewall surface... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making (100) NMOS and (110) PMOS sidewall surface..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making (100) NMOS and (110) PMOS sidewall surface... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2773143