Method of machining wafer

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices

Reexamination Certificate

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Details

C438S459000

Reexamination Certificate

active

07608483

ABSTRACT:
A method of machining a wafer, wherein a wafer provided with devices each having a low dielectric constant insulating film (low-k film) stacked on the face side thereof is divided into the individual devices, the devices thus divided are mounted on a wiring board, and then a grindstone is brought into contact with each of the mounted devices from the side of a side surface of the devices, to grind the back side of the device by a desired amount. Since no vertical load is exerted on the low-k film, the low-k film can be prevented from being broken, and device quality is not lowered.

REFERENCES:
patent: 6936499 (2005-08-01), Shibata et al.
patent: 7278903 (2007-10-01), Masuda
patent: 7384812 (2008-06-01), Misawa
patent: 7462094 (2008-12-01), Yoshida et al.
patent: 7527547 (2009-05-01), Kajiyama et al.
patent: 2007/0093040 (2007-04-01), Sekiya
patent: 2008/0318362 (2008-12-01), Miyazaki et al.
patent: A 2006-303051 (2006-11-01), None

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