Method of lowering contact resistance of implanted contact regio

Details Method of lowering contact resistance of implanted contact regio Method of lowering contact resistance of implanted contact regio

1984-03-29

1985-08-20

Hearn, Brian E.

Metal treatment

Compositions

Heat treating

29571, 29576B, 29590, H01L 21265

Patent

active

045362238

ABSTRACT:
The resistance between a conductive contact and a region of relatively high conductivity in a body of semiconductor material is lowered by forming the high conductivity region by implanting ions of a desired conductivity type into the semiconductor body through a layer of a material which is electrically innocuous in the semiconductor body and is substantially oxygen free in the layer and at the interface between the layer and the semiconductor body. The layer is applied to the body by first removing any oxide from the surface of the body in an oxygen free ambient and immediately applying the layer to the body while maintaining the oxygen free ambient.

REFERENCES:
patent: 3747203 (1973-07-01), Shannon
patent: 4030942 (1977-06-01), Keenan et al.
patent: 4084311 (1978-04-01), Yasuoka et al.
patent: 4317686 (1982-03-01), Anand et al.
patent: 4385938 (1983-05-01), Park et al.
Contact Resistance: Al and Al-Si to Diffused N+ and P+ Silicon, T. J. Faith et al., Journal Vacuum Science Technology, Al(2), Apr.-Jun. 1983, pp. 443-448.

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