Method of low dose phoshorus implantation for oxide passivated d

Details Method of low dose phoshorus implantation for oxide passivated d Method of low dose phoshorus implantation for oxide passivated d

1977-12-02

1979-03-13

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 20, 357 48, 357 59, 357 91, H01L 21265, H01L 754

Patent

active

041441001

ABSTRACT:
Low dosage phosphorus implantation regions in <100> P-type silicon are subjected to a severe damage implant with halogen or silicon ions, preferably fluorine and chlorine. This permits anneal in a strongly oxidizing atmosphere for PN junction passivation, without concurrently inducing PN junction leakage. Oxide passivated PN junctions are formed having leakages as low as when the low dose phosphorus implants are annealed in other atmospheres, or are formed in <111> silicon.

REFERENCES:
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patent: 3821783 (1974-06-01), Sugita et al.
patent: 4069068 (1978-01-01), Beyer et al.
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Geipel et al. "Electrochem. Soc. Meet., Los Vegas, Oct. 1976, Abstract Nr. 317.
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