Method of liquid phase epitaxial growth

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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148172, H01L 21208

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active

042630649

ABSTRACT:
An improved method of liquid phase epitaxial growth of III-V compound on an nP substrate by growing the epitaxial layer in an atmosphere of H.sub.2 with 10.sup.-5 to 10.sup.-4 mole fraction PH.sub.3.

REFERENCES:
patent: 3077384 (1963-02-01), Enk et al.
patent: 3664294 (1972-05-01), Solomon
patent: 3975218 (1976-08-01), Ruehrwein
patent: 4004953 (1977-01-01), Otsubo et al.
patent: 4072544 (1978-02-01), DeWinter et al.
patent: 4142924 (1979-03-01), Hsieh

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