Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means
Reexamination Certificate
2008-06-03
2008-06-03
Sherry, Michael (Department: 2836)
Electricity: electrical systems and devices
Safety and protection of systems and devices
Load shunting by fault responsive means
C361S111000
Reexamination Certificate
active
07382593
ABSTRACT:
An ESD protection circuit for an input/output pad of an IC is disclosed with discharge paths to both a power rail and ground. The ESD circuit is arranged with NMOS and PMOS transistors arranged with their drains connected to the pad. However, the drain capacitances have voltage sensitivities that compensate or cancel each other, and with proper sizing the capacitance load on the pad can be made substantially constant over a given voltage range. By providing a discharge path to a power rail, the ESD circuit may be designed to be more tolerant of overvoltages on the power rail.
REFERENCES:
patent: 5940258 (1999-08-01), Duvvury
patent: 6317305 (2001-11-01), Dedic
patent: 6501632 (2002-12-01), Avery et al.
patent: 6690066 (2004-02-01), Lin et al.
patent: 6747501 (2004-06-01), Ker et al.
patent: 2002/0064007 (2002-05-01), Chang et al.
patent: 0940852 (1999-09-01), None
Ming-Dou Ker et al, “Design and Analysis of the On-Chip ESD Protection Circuit with a Constant Input Capacitance for High-Precision Analog Applications”, 2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. May 31, 2000, pp. 61-64, vol. 5, Switzerland.
Richier C. et al, “Investigation on different ESD protection strategies devoted to 3.3V RF applications (2GHz) in a 0.18 mum CMOS process”, Journal of Electrostatics, Jan. 2002, pp. 55-71, vol. 54, Amsterdam, Netherlands.
Lin J. et al, “A Fail-Safe ESD Protection Circuit with 230 fF Linear Capacitance for High-Speed/High-Precision 0.18 mum CMOS I/O Application”, International Electron Devices Meeting 2002. IEDM. Technical Digest, Dec. 8, 2002, pp. 349-352, New York, NY.
Miske Myron
Morrill David
Nguyen Danny
Sherry Michael
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