Method of limiting stacking faults in oxidized silicon wafers

Details Method of limiting stacking faults in oxidized silicon wafers Method of limiting stacking faults in oxidized silicon wafers

1977-12-27

1979-04-17

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 91, H01L 21322

Patent

active

041499050

ABSTRACT:
Many of the stacking faults which occur after oxidation of silicon wafers are substantially eliminated by the use of an argon-hydrochloric anneal of the wafers just prior to oxidation. This anneal, which is carried out in the same chamber in which oxidation is carried out, removes impurities from the surface of the wafers and thereby limits the sites at which stacking faults form after oxidation.

REFERENCES:
kato et al, ". . . Stacking Faults. . . Power Transistors", Solid St. Electr. 19 (1976) 955.
Shiraki et al, "Stacking Faults . . . Elimination . . . by HCl Oxidation," Jap. J. Appl. Phys. 15 (1976) 1.
Sanders et al., "Oxidation . . . Defects . . . in Si", Phil. Mag. 20 (1969) 881.
Shiraki, "Si. . . Annealing . . . Defect Generation", Jap. J. Appl. Phys. 13 (1974) 1514.
Ashburn et al., "Effects of Dislocations in Si . . . ", Solid State Electr. 20 (1977) 731.
Shiraki, ". . . Stacking Faults in Si . . . ", Jap. J. Apl. Phys. 14 (1975) 747.
Hokari et al., ". . . Defect . . . Suppression . . . HCl Oxidation", Jap. J. Appl. Phys.

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